منابع مشابه
Optimizing the Formation of Nickel Silicide
A review of the formation processes for nickel silicide is given to assess the limitations of using the silicide for sub-65 nanometer technologies. Various aspects attributed to the NiSi formation process are described and addressed by using a two-step process sequence for annealing. The focus of this study was to develop a process sequence with three principal steps to achieve low resistivity ...
متن کاملMathematical model for a radioactive marker in silicide formation
A mathematical model is constructed to interpret the profiles of radioactive Si tracers in a computer simulation proposed by R. Pretorius and A. P. Botha [Thin Solid Films 91, 99 ( 1982)]. This model assumes that only Si moves in the silicide, that the Si moves interstitially and convectively, and that the moving Si can exchange sites with the stationary Si in the silicide lattice. An analytica...
متن کاملCo silicide formation on SiGeC/Si and SiGe/Si layers
The reaction of Co with epitaxial SiGeC/Si layers is investigated and compared to the reaction of Co with SiGe/Si layers. The sequence of phase formation is the same as the reaction of Co with monocrystalline Si, however, cobalt disilicide is formed at much higher temperatures. The presence of C further delays the disilicide formation, as a result of C accumulation at the silicide/substrate int...
متن کاملComment on “Oxidation of Hafnium and Diffusion of Hafnium Atoms
In his paper, Chandi C. Dey reports on the measurement of the nuclear quadrupole interaction of 181Hf(β−)181Ta in α-Hf metal with a few percent zirconium heated in air by perturbed angular correlation (PAC) of γ-rays. Since he did not observe the formation of HfO2 up to 773 K and during initial heating at 873 K for one day, he concluded that no oxygen is absorbed. The time dependent hyperfine i...
متن کاملEndotaxial silicide nanowires.
We demonstrate the growth of self-assembled nanowires of cobalt silicide on Si(111), (100), and (110) substrates during deposition of Co onto a heated Si substrate. Silicide islands form via an endotaxial mechanism, growing into the substrate along inclined Si{111} planes, which breaks the symmetry of the surface and leads to a long, thin nanowire shape. During growth, both the length and width...
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ژورنال
عنوان ژورنال: Physical Review B
سال: 2004
ISSN: 1098-0121,1550-235X
DOI: 10.1103/physrevb.69.235322